A short movie about 6MeV SIRIUS tandem accelerator at the Centre for accelerator science at ANSTO.
A new results on implantation induced defects in 4H-SiC have been published.
Takeshi Ohshima (QST), Jose Coutinho (UA) and Ivana Capan (RBI) presented project results at International Conference on Silicon Carbide and Related Materials, September 17–22, 2017, in Washington, D.C.
Jose Coutinho (UA), Takeshi Ohshima and Shin-ichiro Sato (QST) are presenting project results at 29th International Conference on Defects in Semiconductors, July 31 – Aug.4, 2017, Matsue, Japan.
Current project results will be presented this year at two major conferences:
On 1-3 October, the second e-SiCure project meeting will be held in Ljubljana, Slovenia at Jozef Stefan Institute.
We made a simple demonstration of our project at public presentation during the Open Day event at Rudjer Boskovic Institute.
e-SiCure project will be presented during the public event at Rudjer Boskovic Institute, “Open Day 2017“.
We present Tomislav Brodar. An excellent student working on the electrical characterization of 4H-SiC SBD’s for his Master’s thesis at RBI.