A new research paper is published:
Ivana Capan, Tomislav Brodar, Jose Coutinho, Takeshi Ohshima, Vladimir Markevich, Anthony Peaker, Acceptor levels of the carbon vacancy in 4H-SiC: combining Laplace deep level transient spectroscopy with density functional modeling, Journal of Applied Physics 124 (2018) 245701.
We proudly present young scientists working on the e-SiCure project.
A special event was held at NATO Headquarters in Brussels on 29 November 2018 to celebrate the 60th anniversary of the NATO SPS Programme.
Our detector prototype has been presented to NATO officials.
Detector prototype has been developed and tested at JSI TRIGA reactor.
Our recent, project-related, publications:
- Ivana Capan, Tomislav Brodar, Takeshi Ohshima, Shin-ichiro Sato, Takahiro Makino, Željko Pastuović, Rainer Siegele, Luka Snoj, Vladimir Radulović, José Coutinho, Vitor J. B. Torres, Kamel Demmouche, Double negatively charged carbon vacancy at the h- and k- sites in 4H-SiC: Combined Laplace-DLTS and DFT study, Journal of Applied Physics 123 (2018) 161597 https://doi.org/10.1063/1.5011124
- Tomislav Brodar, Ivana Capan, Vladimir Radulović, Luka Snoj, Željko Pastuović, José Coutinho, and Takeshi Ohshima, Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC, Nuclear Inst. and Methods in Physics Research B 437 (2018) 27 https://doi.org/10.1016/j.nimb.2018.10.030
A short movie about 6MeV SIRIUS tandem accelerator at the Centre for accelerator science at ANSTO.
A new results on implantation induced defects in 4H-SiC have been published.
Takeshi Ohshima (QST), Jose Coutinho (UA) and Ivana Capan (RBI) presented project results at International Conference on Silicon Carbide and Related Materials, September 17–22, 2017, in Washington, D.C.
Jose Coutinho (UA), Takeshi Ohshima and Shin-ichiro Sato (QST) are presenting project results at 29th International Conference on Defects in Semiconductors, July 31 – Aug.4, 2017, Matsue, Japan.
We proudly present Satoshi, Klemen, Tomislav and Tomoya, student stipend recipients at project.